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SC1512 SILICON CARBIDE SCHOTTKY DIODE

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Description

R SEMICONDUCTOR SC1512 SILICON CARBIDE SCHOTTKY DIODE Reverse Voltage - 1200 Volts Forward Current - 15.0Amperes .
SIC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide.

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Datasheet Specifications

Part number
SC1512
Manufacturer
JINAN JINGHENG
File Size
59.31 KB
Datasheet
SC1512-JINANJINGHENG.pdf
Description
SILICON CARBIDE SCHOTTKY DIODE

Features

* Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery MECHANICAL DATA Case: JEDEC TO-22OAC Molding compound meets UL94V-0 flammability rating Terminals: Lead solderable per J-STD-002 and JESD22-B102 Pol

Applications

* General Purpose SMPS, Solar inverter, UPS Power Switching Circuits MAXIMUM RATINGS (Ratings at 25°C ambient temperature unless otherwise specifie

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