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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SA1943 TRANSISTOR (PNP)
FEATURES z High Collector Current Capability z High Power Dissipation z High Frequency z High Voltage z Complement to 2SA5200
TO – 3P
1. BASE 2. COLLECTOR 3. EMITTER
APPLICATIONS z High-Fidelity Audio Output Amplifier z General Purpose Power Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC PCM RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Collector Power Dissipation (TC=25℃) Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -230 -230
-5 -15 3.