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IRFB640 - N-Channel MOSFET

Description

1.

GATE 2.

DRAIN 3.

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Datasheet Details

Part number IRFB640
Manufacturer JCET
File Size 892.46 KB
Description N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS IRFB640 MOSFET( N-Channel ) TO-263-2L FEATURE z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement DESCRIPTION 1. GATE 2. DRAIN 3. SOURCE Third Generation HEXFETs from internation Rectifier provide the designer with the best combination of fast switching ,ruggedized device design,low on-resistance and cost effectiveness. The TO-220-3L package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220-3L contribute to its wide acceptance throughout the industry.
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