ISL70020SEH Datasheet (Intersil) - 65A Enhancement Mode GaN Power Transistors

ISL70020SEH, 65A Enhancement Mode GaN Power Transistors

Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors.

These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation.

Applications for these devices include commercial aerospace, medical, and nuclear power generation.

The exceptionally high electron mobility and low temperature coefficient of the GaN allows

ISL70020SEH Features

* Very low rDS(ON) 3.5mΩ (typical)

* Ultra low total gate charge 19nC (typical)

* ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

* ISL73020SEH radiation acceptance testing ○ Low dose