FRS430R - 3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Intersil (Renesas)

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

3A, 500V, RDS(on) = 2.52Ω.
Second Generation Rad Hard MOSFET Results From New Design Concepts.
Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 8.0nA Per-RAD(Si)/sec Typically Pre-RAD Speciﬁcations for 3E12 Neutrons/cm2 Usable to 3E13 Neutrons/cm2.
Gamma Dot.

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FRS430R 3a/ 500v/ 2.52 ohm/ rad hard/ n-channel power mosfets by Intersil - Datasheet Preview

Datasheet Details

Part number	FRS430R
Manufacturer	Intersil (Renesas)
File Size	49.43 KB
Description	3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs
Datasheet	FRS430R Datasheet

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Other Datasheets by Intersil (Renesas)

Part Number	Description
FRS430D	3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs
FRS430H	3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs
FRS440D	5A/ 500V/ 1.420 Ohm/ Rad Hard/ N-Channel Power MOSFETs
FRS440H	5A/ 500V/ 1.420 Ohm/ Rad Hard/ N-Channel Power MOSFETs
FRS440R	5A/ 500V/ 1.420 Ohm/ Rad Hard/ N-Channel Power MOSFETs

Full PDF Text Transcription

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FRS430D, FRS430R, FRS430H June 1998 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-257AA Features • 3A, 500V, RDS(on) = 2.52Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 8.

Published: Apr 23, 2005 |