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FRL430H - N-Channel Power MOSFET

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 2A, 500V, RDS(on) = 2.50Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 8.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E12 Neutrons/cm2 Usable to 3E13 Neutrons/cm2.
  • Gamma Dot.

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Other Datasheets by Intersil (Renesas)

Part Number Description
FRL430D N-Channel Power MOSFET
FRL430R N-Channel Power MOSFET
FRL130D N-Channel Power MOSFET
FRL130H N-Channel Power MOSFET
FRL130R N-Channel Power MOSFET

Full PDF Text Transcription

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FRL430D, FRL430R, FRL430H June 1998 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-205AF Features • 2A, 500V, RDS(on) = 2.50Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 8.
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