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FRK264H - N-Channel Power MOSFET

Description

Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 34A, 250V, RDS(on) = 0.120Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

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📁 Similar Datasheet

Part Number Description Manufacturer
FRK264 N-Channel MOSFET Transistor Inchange Semiconductor
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Other Datasheets by Intersil (Renesas)

Part Number Description
FRK264D N-Channel Power MOSFET
FRK264R N-Channel Power MOSFET
FRK260D N-Channel Power MOSFET
FRK260H N-Channel Power MOSFET
FRK260R N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FRK264D, FRK264R, FRK264H June 1998 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 34A, 250V, RDS(on) = 0.120Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 22.
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