FRE264H Datasheet (Intersil) - N-Channel Power MOSFET

FRE264H, N-Channel Power MOSFET

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ .

Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E1

FRE264H Features

* 23A, 250V, RDS(on) = 0.130Ω

* Second Generation Rad Hard MOSFET Results From New Design Concepts

* Gamma Meets Pre-Rad Speciﬁcations to 100KRAD(Si) Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec