Datasheet4U Logo Datasheet4U.com

RFP3055LE - N-Channel Power MOSFET

Features

  • 11A, 60V.
  • rDS(ON) = 0.107Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFD3055LE RFD3055LESM RFP3055LE.

📥 Download Datasheet

📁 Similar Datasheet

  • RFP3055LE - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFP3055 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • RFP30N06LE - N-Channel MOSFET (Fairchild Semiconductor)
  • RFP30N06LE - N-Channel Enhancement-Mode Power MOSFETs (Harris)
  • RFP30P05 - P-CHANNEL POWER MOSFETs (COMSET)
  • RFP30P05 - P-Channel Enhancement-Mode Power MOSFET (Harris)
  • RFP30P06 - P-Channel Power MOSFET (Fairchild Semiconductor)
  • RFP-10-100RV - Flanged Resistors (Anaren Microwave)
  • RFP-10-50TV - Flanged Terminations (Anaren Microwave)
  • RFP-10-50TVC - Flanged Terminations (Anaren Microwave)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 File Number 4044.3 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158. Features • 11A, 60V • rDS(ON) = 0.
Published: |