Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features
- -25A, -100V and -80V.
- rDS(ON) = 0.150Ω.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark
Ordering Information
PART NUMBER RFH25P08 RFH25P10 RFK25P08 RFK25P10.
RFK25P10_IntersilCorporation.pdf
