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MWS5114 - 1024-Word x 4-Bit LSI Static RAM

General Description

The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology.

It is designed for use in memory systems where low power and simplicity in use are desirable.

Key Features

  • Fully Static Operation.
  • Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types).
  • Common Data Input and Output.
  • Memory Retention for Standby Battery Voltage as Low as 2V Min.
  • All Inputs and Outputs Directly TTL Compatible.
  • Three-State Outputs.
  • Low Standby and Operating Power Ordering Information 200ns MWS5114E3 MWS5114D3 MWS5114D3X 250ns MWS5114E2 MWS5114E2X MWS5114D2 300ns MWS5114E1 MWS5114D1 TEMPER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MWS5114 March 1997 1024-Word x 4-Bit LSI Static RAM Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V. The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceramic packages (D suffix) and in 18 lead dualin-line plastic packages (E suffix).