JANSR2N7397 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET

Intersil Corporation

Description

JANSR2N7397 Formerly FSL234R4 June 1998 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

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Datasheet Specifications

Part number: JANSR2N7397
Manufacturer: Intersil Corporation
File Size: 44.99 KB
Datasheet: JANSR2N7397_IntersilCorporation.pdf
Description: 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET

Features

* 4A, 250V, rDS(ON) = 0.610Ω
* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat

Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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JANSR2N7397 250V 0.610 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation

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