IRF9630 Datasheet (Intersil Corporation)

IRF9630, P-Channel Power MOSFET

IRF9630, RF1S9630SM Data Sheet July 1999 File Number 2224.3 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other

IRF9630 Features

* 6.5A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for