IRF322 - N-Channel Power MOSFET

Intersil Corporation

Datasheet Details

Part number	IRF322
Manufacturer	Intersil Corporation
File Size	67.83 KB
Description	N-Channel Power MOSFET
Datasheet	IRF322_IntersilCorporation.pdf

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

2.8A and 3.3A, 350V and 400V.
rDS(ON) = 1.8Ω and 2.5Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323.

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Published: Apr 16, 2005 |