IRF250 Datasheet (Intersil Corporation)

IRF250, N-Channel Power MOSFET

IRF250 Data Sheet March 1999 File Number 1825.3 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is designed, tested and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

These MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low

IRF250 Features

* 30A, 200V

* rDS(ON) = 0.085Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for