HS9-6617RH - Radiation Hardened 2K x 8 CMOS PROM

Intersil Corporation

Datasheet Details

Part number	HS9-6617RH
Manufacturer	Intersil Corporation
File Size	94.36 KB
Description	Radiation Hardened 2K x 8 CMOS PROM
Datasheet	HS9-6617RH_IntersilCorporation.pdf

only.

QML Class T, Per MIL-PRF-38535.
Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2.
Field Programmable Nicrome Fuse Links.
Low Standby Power 1.1mW Max.
Low Operating Power 137.5mW/MHz Max.
Fast Access Time 100ns Max.
TTL Compatible Inputs/Outputs.
Synchronous Operation.
On Chip Address Latches, Three-State Outputs Pinouts HS1-6617RH-T (SBDIP), CDIP2-T24 TOP VIEW A.

📁 HS9-6617RH Similar Datasheet

HS9-82C37ARH-8 - Radiation Hardened CMOS High Performance Programmable DMA Controller (Harris Corporation)
HS9-82C37ARH-Q - Radiation Hardened CMOS High Performance Programmable DMA Controller (Harris Corporation)
HS9016 - 10/100 Small Package Transformer module (Magcom)
HS9147x - RES NTWK / THICK FILM (Stackpole Electronics)
HS9148 - Infrared ASIC code using CMOS (HuaXin)
HS9149A - Dedicated circuit for infrared remote control receiver system (HuaXin)
HS9338 - Complete uP Compatible 12-Bit DAC (Hybrid Systems)
HS945 - NPN SILICON TRANSISTOR (SHANTOU HUASHAN ELECTRONIC)

Other Datasheets by Intersil Corporation

Published: Mar 26, 2005 |