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HGTP3N60C3D Datasheet - Intersil Corporation

HGTP3N60C3D N-Channel IGBT

HGTP3N60C3D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used

HGTP3N60C3D_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTP3N60C3D

Manufacturer:

Intersil Corporation

File Size:

273.87 KB

Description:

N-channel igbt.

HGTP3N60C3D Distributor

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HGTP3N60C3D HGTP3N60C3D N-Channel IGBT Intersil Corporation