Part number:
HGT1S2N120BNDS
Manufacturer:
Intersil Corporation
File Size:
87.43 KB
Description:
12a/ 1200v/ npt series n-channel igbt with anti-parallel hyperfast diode.
HGT1S2N120BNDS_IntersilCorporation.pdf
Datasheet Details
HGT1S2N120BNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching appl
HGT1S2N120BNDS_IntersilCorporation.pdf
Datasheet Details
HGT1S2N120BNDS
Intersil Corporation
87.43 KB
12a/ 1200v/ npt series n-channel igbt with anti-parallel hyperfast diode.
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HGT1S2N120BNDS Distributor