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HCS20MS Radiation Hardened Dual 4-Input NAND Gate

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Description

HCS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T.
The Intersil HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

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Datasheet Specifications

Part number
HCS20MS
Manufacturer
Intersil Corporation
File Size
179.29 KB
Datasheet
HCS20MS_IntersilCorporation.pdf
Description
Radiation Hardened Dual 4-Input NAND Gate

Features

* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010

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