FSYC055D Datasheet (Intersil Corporation) - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYC055D, Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RA

FSYC055D Features

* 70A (Note), 60V, rDS(ON) = 0.012Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* D