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FSTYC9055R - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

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Intersil Corporation

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FSTYC9055R Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs by Intersil Corporation - Datasheet Preview — Datasheet preview – FSTYC9055R

Datasheet Details

Part number	FSTYC9055R
Manufacturer	Intersil Corporation
File Size	74.87 KB
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Datasheet	FSTYC9055R Datasheet
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Product details

Features

64A, -60V, rDS(ON) = 0.023Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 6nA Per-RAD (Si)/s Typically.
Neutron - Maintain.

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Other Datasheets by Intersil Corporation

FSTYC9055D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSTYC9055D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
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FSTYC9055D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSTYC9055D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSTYC9055D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Published: Mar 23, 2005 |