FSS23A0R Datasheet (Intersil Corporation) - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSS23A0R, 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSS23A0D, FSS23A0R Data Sheet June 1999 File Number 4485.2 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideal

FSS23A0R Features

* 9A, 200V, rDS(ON) = 0.330Ω

* Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias

* Dose Rat