2N120CND - N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	2N120CND
Manufacturer	Intersil Corporation
File Size	129.85 KB
Description	N-Channel IGBT
Datasheet	2N120CND_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high voltage switching.

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Published: Oct 21, 2009 |