U3410 Datasheet (International Rectifier)

U3410, HEXFET Power MOSFET

l D VDSS = 100V G S RDS(on) = 0.105Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET

U3410 Features

* Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U3410 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) M IN. 10.42 (.