U2905 HEXFET Power MOSFET

International Rectifier

Description

PD- 91334E IRLR/U2905 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number: U2905
Manufacturer: International Rectifier
File Size: 135.09 KB
Datasheet: U2905_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www. irf. com 7 IRLR/U2905 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P ak T O -252 A A

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U2905 HEXFET Power MOSFET International Rectifier

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