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S6B60KD IRGS6B60KD

S6B60KD Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

S6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. Benefits
* Benchmark Efficiency

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IRGS6B60KD International Rectifier
International Rectifier S6B60KD-like datasheet