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JANSG2N7697UFHC - Radiation Hardened GaN transistor

International Rectifier

The JANSG2N7697UFHC by International Rectifier is a Radiation Hardened GaN transistor. Below is the official datasheet preview.

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JANSG2N7697UFHC Radiation Hardened GaN transistor by International Rectifier - Datasheet Preview — Official preview page of the JANSG2N7697UFHC Radiation Hardened GaN transistor datasheet (International Rectifier).

Datasheet Details

Part number	JANSG2N7697UFHC
Manufacturer	International Rectifier
File Size	664.93 KB
Description	Radiation Hardened GaN transistor
Datasheet	JANSG2N7697UFHC-InternationalRectifier.pdf
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JANSG2N7697UFHC Product details

Description

IG1NT052N10R is part of the IR HiRel family of products.

Features

Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV. cm2/mg (Au ion).
Ultra low RDS(on).
Low total gate charge.
Zero reverse recovery charge.
Hermetically sealed ceramic package.
Surface mount.
Light weight.
ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
VDS max: 100V.
ID: 52A.
RDS(on) max : 6.0m.
QG max: 13nC.
Size: 7.1mm x 5.3mm.
REF: MIL.

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Published: Oct 26, 2025 |