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IRLR2905Z POWER MOSFET

IRLR2905Z Description

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

IRLR2905Z Applications

* HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 13.5mΩ ID = 42A S D-Pak I-Pak IRLR2905ZPbF IRLU2905ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain

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POWER MOSFET International Rectifier
International Rectifier IRLR2905Z-like datasheet