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IRLML6402 HEXFET Power MOSFET

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Description

l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching G1 S2 Descripti.
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

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Features

* rmation Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) TR FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .

Applications

* where printed circuit board space is at a premium. The low profile (

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