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IRLML2803PBF POWER MOSFET

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Description

IRLML2803PbF l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

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Applications

* G1 S2 HEXFET® Power MOSFET VDSS = 30V 3D RDS(on) = 0.25Ω A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board s

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