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Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
G
PD - 95990A
IRLL024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 60mΩ S ID = 5.
IRLL024ZPbF Datasheet
