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IRL3303 HEXFET POWER MOSFET

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Description

PD - 9.1322B IRL3303 HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temper.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number
IRL3303
Manufacturer
International Rectifier
File Size
103.30 KB
Datasheet
IRL3303_InternationalRectifier.pdf
Description
HEXFET POWER MOSFET

Features

* 4 8 ) 4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 ) 1 . 1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 ) 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 0 . 9 3 ( .0 3 7 )

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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