Description
PD - 95150 Advanced Process Technology l Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switchin.
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IRL3103SPbF IRL3103LPbF
HEXFET® Power MOSFET
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VDSS = 30V RDS(on) = 12mΩ
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Features
* 5%
[ ISD ]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
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IRL3103S/LPbF
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 30S WIT H L OT COD E 80 24 AS S E MB L E D ON WW 02 , 2 000 I
Applications
* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3103L) is available for lowprofile applications. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to
