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IRHYB67134CM RADIATION HARDENED POWER MOSFET

IRHYB67134CM Description

PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (.

IRHYB67134CM Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Dra

IRHYB67134CM Applications

* These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s hig

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RADIATION HARDENED POWER MOSFET International Rectifier
International Rectifier IRHYB67134CM-like datasheet