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IRHNJ7430SE RADIATION HARDENED POWER MOSFET

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Description

PD - 93830B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1..

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Datasheet Specifications

Part number
IRHNJ7430SE
Manufacturer
International Rectifier
File Size
147.75 KB
Datasheet
IRHNJ7430SE_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications suchwww.

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