IRHNJ53Z30 - RADIATION HARDENED POWER MOSFET

International Rectifier

Datasheet Details

Part number	IRHNJ53Z30
Manufacturer	International Rectifier
File Size	262.19 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	IRHNJ53Z30_InternationalRectifier.pdf

n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Volta.

📁 IRHNJ53Z30 Similar Datasheet

Other Datasheets by International Rectifier

Published: Oct 15, 2006 |