IRHNB8160, IRHNB3160 - RADIATION HARDENED POWER MOSFET

International Rectifier

Datasheet Details

Part number	IRHNB8160, IRHNB3160
Manufacturer	International Rectifier
File Size	249.92 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	IRHNB3160_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRHNB8160, IRHNB3160. Please refer to the document for exact specifications by model.

! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

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Published: Oct 15, 2006 |