IRHNA9160 - P-CHANNEL TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRHNA9160
Manufacturer	International Rectifier
File Size	233.17 KB
Description	P-CHANNEL TRANSISTOR
Datasheet	IRHNA9160_InternationalRectifier.pdf

s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25oC I D @ VGS = -12V, TC = 100oC IDM PD @ TC = 25.

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Published: Oct 15, 2006 |