Datasheet Specifications
- Part number
- IRHMK57160
- Manufacturer
- International Rectifier
- File Size
- 171.55 KB
- Datasheet
- IRHMK57160-InternationalRectifier.pdf
- Description
- RADIATION HARDENED POWER MOSFET
Description
PD-97415 RADIATION HARDENED IRHMK57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-254AA) 5 TECHNOLOGY Product Summary Part Num.
Features
* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°Applications
* These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain aIRHMK57160 Distributors
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