IRHF9130 - P-Channel Power MOSFET

International Rectifier

Datasheet Details

Part number	IRHF9130
Manufacturer	International Rectifier
File Size	1.13 MB
Description	P-Channel Power MOSFET
Datasheet	IRHF9130_InternationalRectifier.pdf

IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

Single Event Effect (SEE) Hardened.
Low RDS(on).
Low Total Gate Charge.
Proton Tolerant.
Simple Drive Requirements.
Hermetically Sealed.
Ceramic Package.
Light Weight.
ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5 ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1 IDM @ TC = 25°C Pulsed Drain Current .

📁 IRHF9130 Similar Datasheet

Other Datasheets by International Rectifier

Published: Oct 16, 2006 |