IRGSL8B60K, IRGB8B60K Datasheet - International Rectifier

IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR

IRGSL8B60K Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits

* Benchmark Effic

IRGB8B60K_InternationalRectifier.pdf

IRGSL8B60K Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGSL8B60K, IRGB8B60K. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRGSL8B60K, IRGB8B60K

Manufacturer:

International Rectifier

File Size:

472.11 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGSL8B60K, IRGB8B60K.
Please refer to the document for exact specifications by model.

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IRGSL8B60K IRGB8B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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