Description
PD - 97355B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .
Features
* Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) T
Applications
* Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
* Rugged transient Performance for increased reliability
* Excellent Current sharing in parallel operation
* Low EMI
E G G C E
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