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IRGSL30B60KPbF, IRGS30B60KPBF Insulated Gate Bipolar Transistor

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Description

PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF .

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This datasheet PDF includes multiple part numbers: IRGSL30B60KPbF, IRGS30B60KPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGSL30B60KPbF, IRGS30B60KPBF
Manufacturer
International Rectifier
File Size
377.68 KB
Datasheet
IRGS30B60KPBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGSL30B60KPbF, IRGS30B60KPBF.
Please refer to the document for exact specifications by model.

Features

* Low VCE (on) Non Punch Through IGBT Technology
* 10µs Short Circuit Capability
* Square RBSOA
* Positive VCE (on) Temperature Coefficient
* Maximum Junction Temperature rated at 175°C
* Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ

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