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IRGS30B60K, IRGB30B60K - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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IRGS30B60K Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGS30B60K, IRGB30B60K. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IRGS30B60K, IRGB30B60K
Manufacturer	International Rectifier ↗
File Size	354.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB30B60K_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRGS30B60K, IRGB30B60K. Please refer to the document for exact specifications by model.

IRGS30B60K Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K www. DataShe.

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Published: Jun 5, 2007 |