IRGS30B60K, IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C .

📥 Download Datasheet

IRGS30B60K Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGS30B60K, IRGB30B60K. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRGS30B60K, IRGB30B60K
Manufacturer: International Rectifier
File Size: 354.36 KB
Datasheet: IRGB30B60K_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: IRGS30B60K, IRGB30B60K.
Please refer to the document for exact specifications by model.

Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits

IRGS30B60K Distributors

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IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGS30B60K-like datasheet