IRGMC50F - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGMC50F
Manufacturer	International Rectifier
File Size	574.07 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGMC50F_InternationalRectifier.pdf

IRGMC50F Product details

Description

n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.They provide substantial benefits to a host of high-voltage, high-current applications.The performance of various IGBTs varies greatly with frequency.Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequen

Features

Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 600V G E VCE(on) max = 1.7V @VGE = 15V, IC = 30A.

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Published: Dec 16, 2006 |