IRGBC30M - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGBC30M
Manufacturer	International Rectifier
File Size	181.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC30M_InternationalRectifier.pdf

IRGBC30M Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V, I C = 16A n-channel.

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Published: Jun 5, 2007 |