Datasheet Specifications
- Part number
- IRG7SC12FPBF
- Manufacturer
- International Rectifier
- File Size
- 314.80 KB
- Datasheet
- IRG7SC12FPBF_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR .
Features
* Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100Applications
* Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI www. DataSheet. net/ E G D2Pak IRG7SC12FPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @IRG7SC12FPBF Distributors
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