IRG4RC20F - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4RC20F
Manufacturer	International Rectifier
File Size	295.71 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4RC20F_InternationalRectifier.pdf

Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs.
Industry standard TO-252AA package.
Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.82V @VGE = 15V, IC = 12A N-channel Benefits.
Generation 4 IGBTs offer highest efficie.

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Published: Sep 27, 2009 |