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IRG4RC10U - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG4RC10U
Manufacturer	International Rectifier ↗
File Size	167.67 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4RC10U_InternationalRectifier.pdf

IRG4RC10U Product details

Features

UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified ap.

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Published: Sep 27, 2009 |