IRG4PC60F - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4PC60F
Manufacturer	International Rectifier ↗
File Size	145.61 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PC60F_InternationalRectifier.pdf

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
Industry standard TO-247AC package. C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Jan 8, 2007 |